Optimization of two-dimensional electron gas...

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2018 / 10

Optimization of two-dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors

Douara, Abdelmalek, Djellouli, Bouaza, Abid, Hamza, Rabehi, Abdelaziz, Ziane, Abderrezzaq, Mostefaoui, Mohammed, Ben Toumi, Ahmed, Dif, Naas
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Language:
english
Journal:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
DOI:
10.1002/jnm.2518
Date:
October, 2018
File:
PDF, 849 KB
english, 2018
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