GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties
Bolshakov, A.D., Fedorov, V.V., Sapunov, G.A., Mozharov, A.M., Dvoreckaia, L.N., Shugurov, K., Shkoldin, V., Shtrom, I.V., Mukhin, M.S., Cirlin, G.E., Mukhin, I.S.Volume:
1092
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/1092/1/012013
Date:
September, 2018
File:
PDF, 617 KB
english, 2018