Effect of carbon doping on threshold voltage and mobility...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2018 / 11 Vol. 36; Iss. 6

Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors

Kurishima, Kazunori, Nabatame, Toshihide, Mitoma, Nobuhiko, Kizu, Takio, Aikawa, Shinya, Tsukagoshi, Kazuhito, Ohi, Akihiko, Chikyow, Toyohiro, Ogura, Atsushi
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Volume:
36
Language:
english
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/1.5039665
Date:
November, 2018
File:
PDF, 1.55 MB
english, 2018
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