Growth of In-Plane Ge 1-x Sn...

The Journal of Physical Chemistry C 2018 / 10

Growth of In-Plane Ge 1-x Sn x Nanowires with 22 at.% Sn Using Solid-Liquid-Solid Mechanism

Azrak, Edy, Chen, Wanghua, Moldovan, Simona, Gao, Shiwen, Duguay, Sébastien, Pareige, Philippe, Roca i Cabarrocas, Pere
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Language:
english
Journal:
The Journal of Physical Chemistry C
DOI:
10.1021/acs.jpcc.8b07142
Date:
October, 2018
File:
PDF, 764 KB
english, 2018
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