Beneficial Effect of Two-Step Annealing via Low Temperature of Vacancy Complexes in N-type Czochralski Silicon
Hannachi, Mohamed, Amri, Chohdi, Hedfi, Hachem, Zarroug, Ahmed, Ezzaouia, HatemLanguage:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-018-6732-5
Date:
October, 2018
File:
PDF, 1.65 MB
english, 2018