A New Low Turn-off Loss SOI Lateral Insulated Gate Bipolar Transistor with Buried Variation of Lateral Doping Layer
Tian, Tao, Zhang, Sheng-Li, Guo, Yu-Feng, Zhang, Jun, Pan, David Z., Yang, Ke-MengYear:
2018
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2018.2877765
File:
PDF, 3.64 MB
english, 2018