![](/img/cover-not-exists.png)
Metalorganic vapor phase epitaxial growth of AlGaN directly on reactive-ion etching-treated GaN surfaces to prepare AlGaN/GaN heterostructures with high electron mobility (∼1500 cm 2 V −1 s −1 ): Impacts of reactive-ion etching-damaged layer removal
Yamamoto, Akio, Kanatani, Keito, Makino, Shinya, Kuzuhara, MasaakiVolume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.125501
Date:
December, 2018
File:
PDF, 1.16 MB
english, 2018