Bottom-up fabrication of InAs-on-nothing MOSFET using...

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Nanotechnology 2018 / 10

Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy

Pastorek, Matej, Olivier, Aurélien, Lechaux, Yoann, Wichmann, Nicolas, KARATSORI, Theano, Fahed, Maria, Bucamp, Alexandre, Addad, Ahmed, Troadec, David, Ghibaudo, Gerard, Desplanque, Ludovic, Wallart,
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Language:
english
Journal:
Nanotechnology
DOI:
10.1088/1361-6528/aaebbd
Date:
October, 2018
File:
PDF, 1.43 MB
english, 2018
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