Study on NO Passivation on the Near Interface Electron and Hole Traps of n-Type 4H-SiC MOS Capacitors by Ultraviolet Light
Jia, Yi Fan, Lv, Hong Liang, Tang, Xiao Yan, Song, Qing Wen, Zhang, Yi Men, Zhang, Yu MingVolume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.924.449
Date:
June, 2018
File:
PDF, 1.50 MB
english, 2018