Experimental and simulation study of the correlation...

Microelectronics Reliability 2018 / 09 Vol. 88-90

Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices

Yu, Qingkui, Sun, Yi, Li, Zheng, Mei, Bo, Li, Xiaoliang, Lv, He, Li, Pengwei, Tang, Min
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Volume:
88-90
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.07.083
Date:
September, 2018
File:
PDF, 587 KB
english, 2018
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