Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography
Guo, Jian Qiu, Yang, Yu, Raghothamachar, Balaji, Dudley, Michael, Weit, Swetlana, Danilewsky, Andreas N., McNally, Patrick J., Tanner, Brian R.Volume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.924.176
Date:
June, 2018
File:
PDF, 1.35 MB
english, 2018