Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation
Goodman, S. A., Auret, F. D., Koschnick, F. K., Spaeth, J.-M., Beaumont, B., Gibart, P.Volume:
4
Year:
1999
Language:
english
Journal:
MRS Internet Journal of Nitride Semiconductor Research
DOI:
10.1557/s1092578300003124
File:
PDF, 100 KB
english, 1999