Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer
Lin, Shaoming, Ke, Shaoying, Ye, Yujie, Huang, Donglin, Wu, Jinyong, Chen, Songyan, Li, Cheng, Wang, Jianyuan, Huang, WeiVolume:
39
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/39/11/113001
Date:
November, 2018
File:
PDF, 794 KB
english, 2018