Failure analysis of 650 V enhancement mode GaN HEMT after...

Microelectronics Reliability 2018 / 09 Vol. 88-90

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

Abbate, C., Busatto, G., Sanseverino, A., Tedesco, D., Velardi, F.
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Volume:
88-90
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.07.071
Date:
September, 2018
File:
PDF, 3.82 MB
english, 2018
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