823 mA/mm drain current density and 945 MW/cm2 Baliga’s figure of merit enhancement-mode GaN MISFETs with a novel PEALD-AlN/LPCVD-Si3N4 dual gate dielectric
Wang, Hongyue, Wang, Jinyan, Li, Mengjun, Cao, Qirui, Yu, Min, He, Yandong, Wu, WengangYear:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2879543
File:
PDF, 496 KB
english, 2018