[Lecture Notes in Electrical Engineering] Microelectronics, Electromagnetics and Telecommunications Volume 521 (Proceedings of the Fourth ICMEET 2018) || Impact of p-GaN Gate Length on Performance of AlGaN/GaN Normally-off HEMT Devices
Panda, Ganapati, Satapathy, Suresh Chandra, Biswal, Birendra, Bansal, RameshVolume:
10.1007/97
Year:
2019
Language:
english
DOI:
10.1007/978-981-13-1906-8_81
File:
PDF, 604 KB
english, 2019