[IEEE 2018 20th International Symposium on High-Current Electronics (ISHCE) - Tomsk, Russia (2018.9.16-2018.9.22)] 2018 20th International Symposium on High-Current Electronics (ISHCE) - The Features of the Stress-Reaction to Repetitive Nanosecond Microwave Pulses
Knyazeva, I.R., Medvedev, M.A., Kutenkov, O.P., Vasilev, A.V., Gorokhovsky, A.A., Rostov, V.V.Year:
2018
Language:
english
DOI:
10.1109/ISHCE.2018.8521190
File:
PDF, 193 KB
english, 2018