Performance of Recessed Anode AlGaN/GaN Schottky Barrier...

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IEEE Transactions on Electron Devices 2018

Performance of Recessed Anode AlGaN/GaN Schottky Barrier Diode Passivated With High-Temperature Atomic Layer-Deposited Al₂O₃ Layer

Lee, Jae-Hoon, Im, Ki-Sik, Kim, Jong Kyu, Lee, Jung-Hee
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2875356
File:
PDF, 1.47 MB
english, 2018
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