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Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al 2 O 3
Kukushkin, S A, Osipov, A VVolume:
387
Language:
english
Journal:
IOP Conference Series: Materials Science and Engineering
DOI:
10.1088/1757-899X/387/1/012044
Date:
July, 2018
File:
PDF, 890 KB
english, 2018