1230 V β-Ga 2 O...

Applied Physics Letters 2018 / 11 Vol. 113; Iss. 20

1230 V β-Ga 2 O 3 trench Schottky barrier diodes with an ultra-low leakage current of

Li, Wenshen, Hu, Zongyang, Nomoto, Kazuki, Zhang, Zexuan, Hsu, Jui-Yuan, Thieu, Quang Tu, Sasaki, Kohei, Kuramata, Akito, Jena, Debdeep, Xing, Huili Grace
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Volume:
113
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.5052368
Date:
November, 2018
File:
PDF, 1.60 MB
english, 2018
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