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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Simulation and mechanism analysis of MOSFET threshold voltage drift induced by manufacturing process
Gao, Wei, Yin, Pengfei, Li, Zehong, Ren, Min, Zhang, Jingping, Zhang, BoYear:
2018
Language:
english
DOI:
10.1109/edssc.2018.8487079
File:
PDF, 1.25 MB
english, 2018