Ge Complementary Tunneling Field-Effect Transistors...

Chinese Physics Letters 2018 / 11 Vol. 35; Iss. 11

Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain

Li, Junkang, Qu, Yiming, Zeng, Siyu, Cheng, Ran, Zhang, Rui, Zhao, Yi
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Volume:
35
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/35/11/117201
Date:
November, 2018
File:
PDF, 1.26 MB
english, 2018
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