4H-SiC 1200 V Junction Barrier Schottky Diodes with High...

Materials Science Forum 2018 / 6 Vol. 924

4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness

Gendron-Hansen, Amaury, Sdrulla, Dumitru, Odekirk, Bruce, Kashyap, Avinash S., Starr, Linda
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Volume:
924
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.924.585
Date:
June, 2018
File:
PDF, 2.35 MB
english, 2018
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