Study of NH3 flow duty-ratio in pulsed-flow epitaxial...

Materials Science in Semiconductor Processing 2019 / 02 Vol. 90

Study of NH3 flow duty-ratio in pulsed-flow epitaxial growth of non-polar a-plane Al0.34Ga0.66N films

He, Jiaqi, Zhang, Xiong, Zhao, Jianguo, Chen, Shuai, Wu, Zili, Fan, Aijie, Zhu, Youhua, Wang, Meiyu, Feng, Zhe Chuan, Hu, Guohua, Cui, Yiping
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Volume:
90
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2018.10.029
Date:
February, 2019
File:
PDF, 1.99 MB
english, 2019
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