Characteristics of GeSn-based multiple quantum well...

Characteristics of GeSn-based multiple quantum well heterojunction phototransistors: a simulation-based analysis

Pandey, Ankit Kumar, Basu, Rikmantra
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Volume:
12
Language:
english
Journal:
IET Optoelectronics
DOI:
10.1049/iet-opt.2017.0071
Date:
June, 2018
File:
PDF, 3.72 MB
english, 2018
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