Improvements in the performance of the n + cap-layer GaN in the formation of transistor structures based on AlGaN / GaN
Zhelannov, A V, Seleznev, B IVolume:
441
Language:
english
Journal:
IOP Conference Series: Materials Science and Engineering
DOI:
10.1088/1757-899X/441/1/012065
Date:
November, 2018
File:
PDF, 937 KB
english, 2018