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Low damage patterning of In 0.53 Ga 0.47 As film for its integration as n-channel in a fin metal oxide semiconductor field effect transistor architecture
Bizouerne, Maxime, Pargon, Erwine, Petit-Etienne, Camille, Labau, Sébastien, David, Sylvain, Martin, Mickael, Burtin, PaulineVolume:
36
Language:
english
Journal:
Journal of Vacuum Science & Technology A
DOI:
10.1116/1.5051505
Date:
November, 2018
File:
PDF, 4.99 MB
english, 2018