First Principles Theoretical Study of 4H-SiC/SiO...

Applied Physics Express 2008 / 6 Vol. 1

First Principles Theoretical Study of 4H-SiC/SiO 2 Interfacial Electronic States on (0001), (000\bar1), and (11\bar20)

Okuno, Eiichi, Sakakibara, Toshio, Onda, Shoichi, Itoh, Makoto, Uda, Tsuyoshi
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Volume:
1
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.1.061401
Date:
June, 2008
File:
PDF, 899 KB
english, 2008
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