A 0.18μm LDMOS with Excellent Ronsp and Uniformity by...

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A 0.18μm LDMOS with Excellent Ronsp and Uniformity by Optimized Manufacture Process

Mao, Kun, Wang, Hai Shi, Yao, Yao, Nie, Hai, Chen, Gong, Zhou, Juan, Chen, Zhu, Du, Jiang
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/TSM.2018.2879215
File:
PDF, 928 KB
english, 2018
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