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[IEEE 2018 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2018.6.18-2018.6.22)] 2018 IEEE Symposium on VLSI Technology - First demonstration of vertically-stacked Gate-All-Around highly-strained Germanium nanowire p-FETs
Capogreco, E., Witters, L., Arimura, H., Sebaai, F., Porret, C., Hikavyy, A., Loo, R., Milenin, A. P., Eneman, G., Favia, P., Bender, H., Wostyn, K., Litta, E. Dentoni, Schulze, A., Vrancken, C., OpdeYear:
2018
Language:
english
DOI:
10.1109/VLSIT.2018.8510645
File:
PDF, 1.89 MB
english, 2018