Rigorous mathematical model of through-silicon via...

IET Circuits Devices & Systems 2018 / 09 Vol. 12; Iss. 5

Rigorous mathematical model of through-silicon via capacitance

Kim, Kibeom, Kim, Jedok, Kim, Hongkyun, Ahn, Seungyoung
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Volume:
12
Language:
english
Journal:
IET Circuits, Devices & Systems
DOI:
10.1049/iet-cds.2017.0157
Date:
September, 2018
File:
PDF, 2.74 MB
english, 2018
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