Investigation of Tm 2 O...

ECS Transactions 2018 / 07 Vol. 86; Iss. 7

Investigation of Tm 2 O 3 As a Gate Dielectric for Ge MOS Devices

Žurauskaitė, Laura, Jones, Leanne, Dhanak, Vinod R., Mitrovic, Ivona Z., Hellström, Per-Erik, Östling, Mikael
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Volume:
86
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/08607.0067ecst
Date:
July, 2018
File:
PDF, 747 KB
english, 2018
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