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Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes
Tan, Shuxin, Zhang, Jicai, Egawa, Takashi, Chen, GangVolume:
8
Language:
english
Journal:
Applied Sciences
DOI:
10.3390/app8122402
Date:
November, 2018
File:
PDF, 574 KB
english, 2018