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A Tunneling Dielectric Layer Free Floating Gate Nonvolatile Memory Employing Type-I Core-Shell Quantum Dots as Discrete Charge-Trapping/Tunneling Centers
Yan, Chengyuan, Wen, Jiamin, Lin, Peng, Sun, ZhenhuaLanguage:
english
Journal:
Small
DOI:
10.1002/smll.201804156
Date:
November, 2018
File:
PDF, 2.18 MB
english, 2018