Double active layer InZnO:N/InZnSnO thin film transistors...

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Journal of Materials Science: Materials in Electronics 2018 / 11

Double active layer InZnO:N/InZnSnO thin film transistors with high mobility at low annealing temperature

Wang, Ye, Su, Jinbao, Dai, Shiqian, Li, Ran, Ma, Yaobin, Wang, Qi, Tian, Longjie, Ning, Keqing, Zhang, Xiqing
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Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-018-0420-3
Date:
November, 2018
File:
PDF, 1.28 MB
english, 2018
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