Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers
Hosomi, Daiki, Chen, Heng, Egawa, Takashi, Miyoshi, MakotoVolume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/aaed2f
Date:
January, 2019
File:
PDF, 629 KB
english, 2019