Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer
Liu, J.-S., Clavel, M., Pandey, R., Datta, S., Xie, Y., Heremans, J. J., Hudait, M. K.Volume:
8
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.5042064
Date:
October, 2018
File:
PDF, 5.23 MB
english, 2018