Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based...

Semiconductors 2018 / 11 Vol. 52; Iss. 11

Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

Okhapkin, A. I., Yunin, P. A., Drozdov, M. N., Kraev, S. A., Skorokhodov, E. V., Shashkin, V. I.
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Volume:
52
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782618110180
Date:
November, 2018
File:
PDF, 560 KB
english, 2018
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