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Design and simulation on improving the reliability of gate oxide in SiC CDMOSFET
Wen, Yi, Zhu, Hao, Yang, Wenchi, Deng, Xiaochuan, Li, Xuan, Chen, Wanjun, Zhang, BoVolume:
91
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/j.diamond.2018.11.020
Date:
January, 2019
File:
PDF, 1.02 MB
english, 2019