Structural characterization of tantalum nitride films as...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2018 / 11 Vol. 36; Iss. 6

Structural characterization of tantalum nitride films as wet etch stop layer in advanced multiwork function metal gate MOSFETs

Mennell, Petra, Parvaneh, Hamed, Bayindir, Zeynel, Kang, Dong Hun, Baumann, Frieder, Madan, Anita, Bello, Abner, Shalini, Ashawaraya, Klare, Mark
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Volume:
36
Language:
english
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/1.5044633
Date:
November, 2018
File:
PDF, 2.30 MB
english, 2018
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