Development of Thin SiGe Relaxed Layers with High-Ge...

Applied Physics Express 2008 / 7 Vol. 1

Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels

Hoshi, Yusuke, Sawano, Kentarou, Hiraoka, Yoshiyasu, Satoh, Yuu, Ogawa, Yuta, Yamada, Atsunori, Usami, Noritaka, Nakagawa, Kiyokazu, Shiraki, Yasuhiro
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Volume:
1
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.1.081401
Date:
July, 2008
File:
PDF, 373 KB
english, 2008
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