Suppressing the Initial Growth of Sidewall GaN by Modifying...

Micromachines 2018 / 11 Vol. 9; Iss. 12

Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Hsu, Wen-Yang, Lian, Yuan-Chi, Wu, Pei-Yu, Yong, Wei-Min, Sheu, Jinn-Kong, Lin, Kun-Lin, Wu, YewChung
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Volume:
9
Language:
english
Journal:
Micromachines
DOI:
10.3390/mi9120622
Date:
November, 2018
File:
PDF, 4.52 MB
english, 2018
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