Multilevel Resistive Switching in P–N...

Journal of Nanoscience and Nanotechnology 2019 / 01 Vol. 19; Iss. 1

Multilevel Resistive Switching in P–N Heterostructure Memory

Zhang, Lei, Wang, Liancheng, Zhao, Xiaoning
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Volume:
19
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2019.16430
Date:
January, 2019
File:
PDF, 6.53 MB
english, 2019
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