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High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels
Zhang, Yachao, Wang, ZhiZhe, Guo, Rui, Liu, Ge, Xu, Shengrui, Bao, Weimin, Zhang, Jincheng, Hao, YueVolume:
113
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.5051685
Date:
December, 2018
File:
PDF, 1.24 MB
english, 2018