Physical Properties of Sputtered Germanium-Doped Indium Tin...

Active and Passive Electronic Components 1993 Vol. 15; Iss. 2

Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature

Wen, S. J., Campet, G., Manaud, J. P.
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Volume:
15
Year:
1993
Language:
english
Journal:
Active and Passive Electronic Components
DOI:
10.1155/1993/13729
File:
PDF, 1.67 MB
english, 1993
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