Anomalous Positive Bias Stress Instability in MoS2...

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IEEE Electron Device Letters 2018

Anomalous Positive Bias Stress Instability in MoS2 Transistors with High-hydrogen-concentration SiO2 gate dielectrics

Yang, Guanhua, Chuai, Xichen, Niu, Jiebin, Wang, Jiawei, Shi, Xuewen, Wu, Quantan, Su, Yue, Zhao, Ying, Liu, Dongyang, Xu, Guangwei, Lu, Congyan, Geng, Di, Lu, Nianduan, Li, Ling, Liu, Ming
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Year:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2886423
File:
PDF, 467 KB
english, 2018
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