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Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology
Yang, Shao-Ming, Sheu, Gene, Lee, Tzu Chieh, Chien, Ting Yao, Wu, Chieh Chih, Lin, Yun Jung, Wang, Cheng-ChiVolume:
201
Year:
2018
Language:
english
Journal:
MATEC Web of Conferences
DOI:
10.1051/matecconf/201820102004
File:
PDF, 606 KB
english, 2018