Achieving short high-quality gate-all-around structures for...

Nanotechnology 2019 / 02 Vol. 30; Iss. 6

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

Gluschke, J G, Seidl, J, Burke, A M, Lyttleton, R W, Carrad, D J, Ullah, A R, Fahlvik, S, Lehmann, S, Linke, H, Micolich, A P
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Volume:
30
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/1361-6528/aaf1e5
Date:
February, 2019
File:
PDF, 1.28 MB
english, 2019
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