Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based...

Electronics 2018 / 12 Vol. 7; Iss. 12

Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Qin, Jian, Zhou, Quanbin, Liao, Biyan, Wang, Hong
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Volume:
7
Language:
english
Journal:
Electronics
DOI:
10.3390/electronics7120410
Date:
December, 2018
File:
PDF, 2.29 MB
english, 2018
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