A Self-Rectifying Resistive Switching Device Based on...

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IEEE Transactions on Electron Devices 2018

A Self-Rectifying Resistive Switching Device Based on HfO₂/TaOₓ Bilayer Structure

Ma, Haili, Zhang, Xumeng, Wu, Facai, Luo, Qing, Gong, Tiancheng, Yuan, Peng, Xu, Xiaoxin, Liu, Yu, Zhao, Shengjie, Zhang, Kaiping, Lu, Cheng, Zhang, Peiwen, Feng, Jie, Lv, Hangbing, Liu, Ming
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2883192
File:
PDF, 1.86 MB
english, 2018
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